Silicon Wafer with Silicon Dioxide Layer

Product Description

Product Name	Silicon Wafer Silicon Dioxide Layer
Product Code	NCZ-WM-0015
CAS	7440-21-3
Diameter	100 mm, also available in 2, 3, 5, 6, 12
Type	P/N Type, Undoped
Orientation	<100> /other orientations are also available
Surface	Single /Both Side Polished
Thickness	400 m, ask for other wafer thickness
Resistivity	0.01-0.02 -cm
SiO2 Thickness Layer	200 nm (customization available)

Superior Surface Finish and Uniformity

Our silicon wafers are offered with polished, ultra-flat surfaces, ensuring exceptional optical clarity and mechanical stability. Both SSP and DSP options are available, accommodating diverse fabrication requirements. The thermally grown SiO2 layer provides precise thickness uniformity across each wafer, supporting advanced device fabrication and reliable reproducibility in application.


Customizable Specifications to Suit Your Needs

Choose between <100> or <111> crystal orientations and select the desired carrier type (P-type or N-type) based on project requirements. With resistivity ranging from 1 to 10 cm and available in 100 mm or 150 mm diameters, these wafers are engineered for versatility in research, manufacturing, and prototyping within the electronics industry.


Reliable Packaging and Storage

Wafers are vacuum-packed in sealed Class 100 cleanroom-compatible cassettes to ensure purity and prevent contamination. Our strict conditioning minimizes humidity and preserves hydrophobicity, maintaining the mirror-like surface and pale-blue or off-white silica layer. This guarantees consistent wafer quality throughout storage, shipping, and handling.