Change Language
Silicon Wafer 6 inch (P Type, Boron Doped)

Silicon Wafer 6 inch (P Type, Boron Doped)

2365 INR/Pack
Get a Price/Quote

Product Details:

  • Strength About 7 GPa (flexural strength)
  • Purity 99.999% (5N)
  • Hardness Around 1150 kg/mm (Mohs scale 7.0)
  • Product Type Silicon Wafer
  • Material P-type Monocrystalline Silicon
  • Alloy Not applicable (elemental Si, Boron doped)
  • Shape Circular (Flat/Notch as per SEMI Standard)
  • Click to View more
Request to Call Back Send Inquiry
X

Silicon Wafer 6 inch (P Type, Boron Doped) Price And Quantity

  • 2365 INR/Pack
  • 1 , , Pack

Silicon Wafer 6 inch (P Type, Boron Doped) Product Specifications

  • Diameter: 6 inch (150 mm), Thickness: 675 25 m
  • 99.999% (5N)
  • Gray (mirror polished surface)
  • Monocrystalline Silicon, Doped with Boron
  • About 7 GPa (flexural strength)
  • Not applicable (elemental Si, Boron doped)
  • Semiconductor fabrication, Solar cells, Microelectronics, Research & Development
  • P-type Monocrystalline Silicon
  • Silicon Wafer
  • Around 1150 kg/mm (Mohs scale 7.0)
  • Circular (Flat/Notch as per SEMI Standard)
  • <0.01% (non-hygroscopic)

Silicon Wafer 6 inch (P Type, Boron Doped) Trade Information

  • 1000-10000 , , Pack Per Day
  • 2-3 Days
  • All India

Product Description

Product NameSilicon Wafer 6 inch
Product CodeNCZ-WM-0012
CAS7440-21-3
Diameter (mm)6 (152.4 mm), also available in 2, 3, 4, 5, 12
TypeP Type /Customization possible
DopingBoron/Customization possible
Crystal Orientation<100> /other orientations are also available
SurfaceSingle/Both Side Polished
Thickness200-600 m, Ask for customization
Resistivity1-10 ohm-cm
Crystal methodCZ
RRG (%)12
Oxygen Contents (ppm)12.5-16.5
Carbon Contents (ppm)1


Superior Quality and Precision

Each wafer is crafted from highly pure monocrystalline P-type silicon and boron dopant, offering stable electrical properties for demanding microelectronics, solar cells, and research needs. Manufacturing processes such as Czochralski and Float Zone ensure excellent uniformity, low moisture, and minimized impurities.


Flexibility and Customization Options

Customers can specify crystal orientation (<100> or <111>), edge design, polishing type, and orientation (flat/notch) as per SEMI standards. Whether you require single or double side polished wafers, tailored thickness, or special packing, we accommodate diverse fabrication and research requirements.

FAQs of Silicon Wafer 6 inch (P Type, Boron Doped):


Q: How is the resistivity range of 1-10 cm achieved in these wafers?

A: The wafer resistivity is controlled through precise boron doping of monocrystalline silicon during the Czochralski (CZ) or Float Zone (FZ) growth process. This enables the wafers to meet the electrical specifications required for semiconductor device fabrication.

Q: What are the advantages of beveled edge and mirror-polished surfaces for these wafers?

A: A beveled edge minimizes wafer chipping during handling, while mirror polish (single or double side) ensures surface cleanliness and consistent flatness, which is essential for photolithography and microfabrication processes.

Q: When should I choose a specific crystal orientation like <100> or <111>?

A: The choice of crystal orientation depends on the intended application. <100> orientation is commonly preferred for integrated circuit manufacturing due to optimal oxidation and etching behaviors, while <111> may be better suited for specialized device structures or research.

Q: Where are these 6 inch P-type silicon wafers typically used?

A: These wafers are primarily utilized in semiconductor fabrication, solar cell manufacturing, microelectronic devices, and R&D laboratories. Their versatile specifications make them ideal for commercial and research environments in India and worldwide.

Q: What benefits does the Class 100 Clean Room packing provide?

A: Packing in a Class 100 Clean Room minimizes particulate contamination, ensuring the wafers maintain their pristine surface and electrical properties throughout storage, transport, and handling before installation or processing.

Q: How does the wafers oxygen and moisture content affect its performance?

A: Low oxygen content (<18 ppma) and minimal moisture (<0.01%) prevent defects and degradation, maintaining stable conductivity and mechanical strength for high-performance electronic and photovoltaic applications.

Tell us about your requirement
product

Price:

Quantity
Select Unit

  • 50
  • 100
  • 200
  • 250
  • 500
  • 1000+
Additional detail
Mobile number

Email

Other Products in 'Electrodes Films Wafers and Targets' category

Silicon Carbide Wafers N-Type (Phosphorus Doped)
Send Inquiry
Silicon Germanium Wafers
Send Inquiry
Silicon Wafer Undoped
Send Inquiry
Sapphire Wafer C Plane (Al2O3)
Send Inquiry
SEND INQUIRY CALL ME FREE



GST : 06AAPCA9378P1ZL
Contact Details
Address
  • Plot No.890, Sector 7, Urban Estate,Kurukshetra - 136118, Haryana, India
  • Phone :08045479033
Key Personnel
  • Mr Satish Tuteja (Sales Head Manager (Overseas Branch))
  • Mobile :08045479033
Quick Links
Our Prducts
  • trusted seller
    • Send Inquiry Send Inquiry
    Send SMS Send SMS
    ARITECH CHEMAZONE PVT LTD. All Rights Reserved.(Terms of Use)
    Developed and Managed by Infocom Network Private Limited.
    Tradeindia
    Back to top