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Silicon Germanium Wafers

Silicon Germanium Wafers

1950 INR/Pack
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Product Details:

  • Strength High mechanical strength
  • Hardness 650 - 700 HV (Vickers Hardness)
  • Purity 99.99% - 99.99999%
  • Product Type Semiconductor wafer
  • Material Silicon Germanium
  • Alloy Silicon Germanium (SiGe)
  • Shape Wafer (circular disc)
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Silicon Germanium Wafers Price And Quantity

  • 1950 INR/Pack
  • 1 , , Pack

Silicon Germanium Wafers Product Specifications

  • Nil
  • 99.99% - 99.99999%
  • Gray to dark gray
  • Diameter: 2 to 8 (50mm - 200mm), Thickness: 250m - 800m
  • High-frequency devices, HBTs, photodetectors, IC fabrication, MEMS, optoelectronics
  • SiGe (Silicon Germanium), Typical Ge content: 10-30%
  • 650 - 700 HV (Vickers Hardness)
  • High mechanical strength
  • Silicon Germanium
  • Wafer (circular disc)
  • Semiconductor wafer
  • Silicon Germanium (SiGe)

Silicon Germanium Wafers Trade Information

  • 1000-10000 , , Pack Per Day
  • 2-3 Days
  • All India

Product Description

Product NameSilicon Germanium Wafers
Product CodeNCZ-WM-0017
CAS7440-56-4
Diameter50.8 mm, also available in 3, 5, 6, 12 (Ask for customization)
TypeN-Type also available as P-type and without doping
DopingAntimony/Customization possible
Orientation<100>/other orientations are also available
SurfaceBoth/Single Side Polished
Wafer Thickness500 /- 25 µm (Ask for customization)
Resistivity10.5 g/cm³


Precision Crystal Orientation and Surface Finish

Silicon Germanium wafers are available in standard <100> and <111> crystal orientations or can be customized for specific application needs. Single or double side polished finishes enhance device performance by improving surface uniformity and reducing scattering losses. These precision features ensure reliable behavior in photodetectors and high-frequency circuits.


Versatile Doping and Resistivity Options

With choices of N-type or P-type doping using boron, phosphorus, or arsenic, and resistivity options from 0.001 to 100 Ohmcm, users can fine-tune the wafers electrical characteristics. This versatility is ideal for manufacturers developing tailored solutions in MEMS, ICs, and optoelectronic devices.


High Mechanical Strength and Thermal Stability

SiGe wafers exhibit strong mechanical properties (650700 HV Vickers Hardness) and a thermal expansion coefficient of ~4.2 x 10^-6/K, supporting operation up to 200C depending on the application. High purity and low defect density deliver consistent performance in critical technology sectors.

FAQs of Silicon Germanium Wafers:


Q: How can I select the appropriate crystal orientation for my Silicon Germanium wafer application?

A: The choice between <100>, <111>, or custom crystal orientation depends on your device requirements. <100> is commonly used for integrated circuits due to favorable surface properties, while <111> may better suit photodetectors or optical MEMS. Custom orientations can further optimize device performance.

Q: What advantages does double side polishing provide for Silicon Germanium wafers?

A: Double side polishing enhances flatness and surface uniformity, reducing defects and scattering losses. This creates a superior active region for high-frequency devices, photodetectors, and ICs, improving overall device yield and reliability.

Q: When is it beneficial to use custom resistivity or doping types in SiGe wafers?

A: Custom resistivity and varied doping types (Boron, Phosphorus, Arsenic) allow for precise control of electrical characteristics, supporting specific requirements in high-frequency devices, HBTs, and optoelectronic applications. Custom values ensure optimal performance for unique designs.

Q: Where are Silicon Germanium wafers typically used in industry?

A: SiGe wafers are widely used in high-frequency electronics, HBTs (heterojunction bipolar transistors), photodetectors, MEMS, integrated circuits, and optoelectronic devices. They are supplied to manufacturers, dealers, exporters, importers, and wholesalers across India for various advanced technology sectors.

Q: What process is involved in customizing the dimensions and composition of these wafers?

A: Customization involves specifying wafer diameter (2" to 8", or 50200mm), thickness (250m800m), and Ge content (typically 1030%). These parameters are adjusted during synthesis and polishing to match the application requirements, ensuring both mechanical stability and optimal electronic properties.

Q: How does the low defect density benefit my semiconductor device production?

A: Low defect density, coupled with prime or test grade classification, reduces failure rates and enhances device performance consistency. This is crucial for high-yield manufacturing of integrated circuits, HBTs, and precision photodetectors.

Q: What usage precautions should be taken regarding the operating temperature of SiGe wafers?

A: These wafers can operate up to 200C depending on the application, but users should ensure that specific device requirements and processing conditions do not exceed this limit. Adhering to recommended operating temperatures preserves wafer integrity and performance.

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