Silicon Carbide Wafers N-Type (Phosphorus Doped)

3650 INR/Pack

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Product Details:

Purity 99.9% (3N)
Hardness Mohs 9.2
Strength High mechanical strength
Product Type N-Type, Phosphorus Doped Wafer
Material Silicon Carbide (SiC)
Alloy None (Single crystal, N-type)
Shape Round wafer
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Silicon Carbide Wafers N-Type (Phosphorus Doped) Price And Quantity

Price 3650 INR/Pack
Minimum Order Quantity 1 , , Pack

Silicon Carbide Wafers N-Type (Phosphorus Doped) Product Specifications

Shape Round wafer
Hardness Mohs 9.2
Strength High mechanical strength
Dimension (L*W*H) 50.8 mm x 0.5 mm (2 diameter, custom thickness available)
Color Light grey to pale blue
Moisture <0.1% (as shipped)
Alloy None (Single crystal, N-type)
Chemical Composition SiC (Silicon Carbide), P-doping (Phosphorus)
Product Type N-Type, Phosphorus Doped Wafer
Purity 99.9% (3N)
Material Silicon Carbide (SiC)
Application High-power electronics, High-frequency devices, Optoelectronics, Research and development

Silicon Carbide Wafers N-Type (Phosphorus Doped) Trade Information

Supply Ability 1000-10000 , , Pack Per Day
Delivery Time 2-3 Days
Main Domestic Market All India

Product Description

Product Name	Silicon Carbide Wafers
Product Code	NCZ-WM-0019
CAS No.	409-21-2
Diameter	12 (304.8 mm), also available in 2, 3, 4, 5, 6 Also available in 10 x 10 mm Size
Type	N-Type
Doping	Phosphorous/ Ask for customization
Crystal Orientation	<100> /other orientations are also available
Surface	Single/Both Side Polished
Thickness	275 m /Ask for customization
Resistivity	1-10 ohm-cm
Crystal method	CZ
RRG	12 %
Oxygen Contents	12.5-16.5 ppm
Carbon Contents	1 ppm

Exceptional Performance for Advanced Devices

Silicon Carbide N-Type wafers deliver high thermal conductivity (4.9 W/cmK at 25C) and strong mechanical durability, making them ideal for high-power and high-frequency electronic devices. Their low resistance, high purity, and customizable specifications ensure versatile utility in both research and industrial applications.

Precision Surface and Edge Preparation

These wafers are finished with single-side polishing and backside etching, while the edges are ground and beveled for enhanced handling safety and integration into intricate device fabrication processes. Such meticulous finish guarantees compatibility with demanding epitaxial growth and further semiconductor processing.

Reliable Supply Chain Solutions

Whether you require wafers for manufacturing, trading, or research, this product is packaged to maintain cleanliness and integrity, vacuum-sealed in controlled environments. Available through various channels in Indiaincluding dealers, exporters, and suppliersusers benefit from assured quality and support.

FAQs of Silicon Carbide Wafers N-Type (Phosphorus Doped):

Q: How do I use Silicon Carbide N-Type wafers in device fabrication?

A: You can utilize these wafers as substrates for high-power electronics, optoelectronic components, and high-frequency devices. Their epitaxial-ready surfaces facilitate deposition of thin layers and integration into advanced semiconductor processes.

Q: What are the benefits of phosphorus doping at concentrations between 1E17 and 1E19 cm?

A: Phosphorus doping enhances the N-type conductivity, enabling precise control of carrier concentration and electrical performance, which is critical for developing efficient power and frequency devices.

Q: When should I choose a wafer with (0001) crystal orientation?

A: Select (0001) crystal orientation when you require optimal alignment for epitaxial growth, improved electronic properties, or when your application specifies orientation-dependent characteristics.

Q: Where are these Silicon Carbide wafers sourced and distributed?

A: These wafers are supplied in India through a diverse network including manufacturers, exporters, suppliers, retailers, and wholesalers, ensuring availability for research institutions and industrial users alike.

Q: What processes do the wafers undergo for surface and edge finish?

A: Each wafer is single-side polished for smoothness and backside etched for improved device compatibility. The edges are ground and beveled to prevent chipping and ease handling during manufacturing.

Q: How does the high thermal conductivity of 4.9 W/cmK benefit my application?

A: Superior thermal conductivity ensures efficient heat dissipation, reducing thermal stress and improving reliability in high-power and high-frequency circuits, thereby extending device lifespan.

Q: What ensures the quality and safety of these wafers during transport and storage?

A: Wafers are packed in cleanroom conditions and vacuum sealed, minimizing contamination, moisture (<0.1%), and physical damage. This guarantees performance and safety upon delivery.