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SILICON WAFER SILICON DIOXIDE LAYER

SILICON WAFER SILICON DIOXIDE LAYER

3500 INR/Pack
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Product Details:

  • Hardness Mohs 6.5
  • Purity 99.999% (5N) Electronic Grade
  • Strength High mechanical strength, brittle fracture
  • Product Type Oxide-coated Silicon Wafer
  • Material Monocrystalline Silicon with thermally grown Silicon Dioxide layer
  • Alloy None (Monocrystalline Silicon)
  • Shape Round (Standard wafer shape)
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SILICON WAFER SILICON DIOXIDE LAYER Price And Quantity

  • 3500 INR/Pack
  • 1 , , Pack

SILICON WAFER SILICON DIOXIDE LAYER Product Specifications

  • Oxide-coated Silicon Wafer
  • Diameter: 100 mm (4 inch), Thickness: 525 m (customizable)
  • Semiconductor device fabrication, MEMS, photovoltaic research, sensor manufacturing, dielectric insulation
  • Mohs 6.5
  • 99.999% (5N) Electronic Grade
  • Round (Standard wafer shape)
  • Si substrate with SiO2 passivation layer (thickness: 100 nm 1000 nm)
  • <0.1% (Ambient storage)
  • Gray (wafer) with transparent/white oxide layer
  • None (Monocrystalline Silicon)
  • High mechanical strength, brittle fracture
  • Monocrystalline Silicon with thermally grown Silicon Dioxide layer

SILICON WAFER SILICON DIOXIDE LAYER Trade Information

  • 1000-10000 , , Pack Per Day
  • 2-3 Days
  • Yes
  • Sample costs shipping and taxes has to be paid by the buyer
  • All India

Product Description

Product Name Silicon Wafer Silicon Dioxide Layer
Product Code NCZ-WM-0015
CAS 7440-21-3
Diameter 100 mm, also available in 2, 3, 5, 6, 12 inch
Type P/N Type, Undoped
Orientation <100>
Surface Single Side Polished
Thickness 400 um
Resistivity 0.01-0.02 ohm-cm
SiO2 Thickness Layer 200 nm


Precision Wafer Construction

Our wafers utilize double-side polished, prime-grade monocrystalline silicon with a thermally grown SiO2 layer, offering remarkable uniformity, flatness, and exceptional surface roughness. The precise <100> crystal orientation ensures predictable etching and electronic properties for critical device development.


Tailored to Your Specifications

With customizable doping type (p-type/n-type), resistivity (110 -cm), and oxide thickness (1001000 nm), these wafers can be manufactured to meet the particular requirements of your research or production process. Whether you are a manufacturer or researcher, tailor-made options are available.


Unmatched Cleanliness and Integrity

Each silicon wafer is vacuum-sealed in a class 100 cleanroom environment, protecting against contamination. The silicon dioxide surface maintains a surface roughness below 1 nm, ensuring consistently reliable electronic properties and minimizing defects in advanced fabrication workflows.

FAQs of SILICON WAFER SILICON DIOXIDE LAYER:


Q: How is the silicon dioxide (SiO2) layer applied to the wafer?

A: The silicon dioxide layer is thermally grown on the monocrystalline silicon substrate. This thermal oxidation process ensures a uniform, high-quality oxide layer with excellent insulating properties and outstanding stability.

Q: What customization options are available for these wafers?

A: Customization is available for crystal orientation, doping type (p-type or n-type), resistivity (within 110 -cm), wafer thickness, and oxide thickness (100 nm to 1000 nm), enabling precise alignment with client specifications.

Q: When should I use a silicon wafer with a SiO2 layer?

A: Silicon wafers with a SiO2 layer are essential when electrical insulation, surface passivation, or controlled oxidation is neededcommon in semiconductor fabrication, MEMS, sensors, and photovoltaic research.

Q: Where are these silicon wafers typically used?

A: These wafers are widely employed in semiconductor device manufacturing, MEMS fabrication, sensor technology, dielectric insulation, and academic or industrial research. They are exported and supplied across India and internationally.

Q: What benefits does the double-side polished (DSP) surface provide?

A: Double-side polishing results in exceptionally smooth surfaces on both sides of the wafer, reducing surface roughness to less than 1 nm for enhanced device yields and minimizing particulate contamination during processing.

Q: How does the thermal stability of the wafer affect its applications?

A: With thermal stability up to 1000C in atmospheric conditions, the wafers withstand high-temperature processing steps without degradation, making them suitable for robust fabrication workflows in advanced electronics.

Q: What is the process for packaging and shipping these wafers?

A: Each wafer is vacuum sealed in class 100 cleanroom conditions to maintain purity and prevent contamination. This ensures the wafers arrive ready for immediate use in high-precision applications.

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