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SILICON WAFER 6 INCH

SILICON WAFER 6 INCH

3500 INR/Pack
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Product Details:

  • Purity 99.999% (5N)
  • Hardness Mohs 7
  • Strength Typical tensile strength 170 MPa
  • Product Type Semiconductor Wafer
  • Material Silicon
  • Alloy None (Pure Silicon)
  • Shape Round (circular wafer)
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SILICON WAFER 6 INCH Price And Quantity

  • 3500 INR/Pack
  • 1 , , Kilograms

SILICON WAFER 6 INCH Product Specifications

  • None (Pure Silicon)
  • Microelectronics, MEMS, Solar Cells, IC fabrication
  • Mohs 7
  • N/A (solid, dry wafer)
  • Monocrystalline Silicon (Si), trace elements < 1 ppm
  • Typical tensile strength 170 MPa
  • Silicon
  • 6 inch diameter, thickness 525 m
  • 99.999% (5N)
  • Round (circular wafer)
  • Semiconductor Wafer
  • Gray/Silvery

SILICON WAFER 6 INCH Trade Information

  • 1000-10000 , , Kilograms Per Day
  • 2-3 Days
  • Yes
  • Sample costs shipping and taxes has to be paid by the buyer
  • All India

Product Description

Product Name Silicon Wafer 6 inch
Product Code NCZ-WM-0012
CAS 7440-21-3
Diameter (mm) 6 inch (152.4 mm), also available in 2, 3, 4, 5, 12 inch
Type P/N Type
Doping Boron/Customization possible
Crystal Orientation <100>  and others are also available
Surface Single/Both Side Polished
Thickness 250-500 um
Resistivity 1-10 ohm-cm
Crystal method CZ
RRG (%) <12
Oxygen Contents (ppm) 12.5-16.5
Carbon Contents (ppm) <1


Precision Engineering for Superior Results

Every silicon wafer is fabricated from pure monocrystalline silicon, with customizable features such as orientation, doping, and surface finish to match specific project needs. The stringent control of flatness, warp, and bow ensures reliable performance across microelectronic and MEMS manufacturing processes.


Unmatched Quality and Cleanliness

Processed in a Class 10 cleanroom and vacuum sealed within Class 100 containers, our wafers uphold strict standards for contamination control. The ultra-high purity and surface integrity make them ideal for sensitive fabrication lines and research environments demanding the utmost consistency and repeatability.


Versatile Applications Across Industries

From integrated circuit (IC) fabrication to solar cell production, these wafers support diverse technologies. Their robust mechanical properties, thermal endurance up to 1100C (in inert atmospheres), and consistent dielectric breakdown voltage make them highly adaptable for both commercial and academic applications.

FAQs of SILICON WAFER 6 INCH:


Q: How are the silicon wafers manufactured to ensure high purity and flatness?

A: The wafers are precision cut from monocrystalline silicon ingots using advanced slicing technology, then polished single or double side to achieve strict flatness (TTV 10 m) and warp parameters. They are processed in Class 10 cleanrooms to ensure minimal contamination resulting in a purity level of 99.999% (5N).

Q: What crystal orientations and doping types are available for these wafers?

A: Customers can choose between <100> or <111> crystal orientations, as well as request intrinsic (undoped), P-type, or N-type doping. We tailor the wafer configuration according to specific electronic or research needs.

Q: When should I choose single side polished (SSP) versus double side polished (DSP) wafers?

A: SSP wafers are generally sufficient for single-sided device fabrication or processes where only one surface needs high optical or electronic quality. DSP wafers are ideal for applications requiring superior flatness and smoothness on both sides, such as in MEMS and optical device production.

Q: Where can these silicon wafers be applied?

A: These 6-inch wafers are suitable for microelectronics, semiconductor IC fabrication, MEMS devices, solar cells, as well as R&D labs and academic settings. Their properties fulfil requirements in various industries and advanced technological research.

Q: What cleaning and packaging processes are used to maintain wafer quality during transport and storage?

A: Each wafer is processed in a Class 10 cleanroom and vacuum sealed, then packed in Class 100 containers. This ensures extremely low particulate and organic contamination, keeping the wafer surfaces pristine throughout shipping and storage.

Q: How do the mechanical and electrical specifications benefit end users?

A: With a dielectric breakdown voltage greater than 300 V/m, Mohs hardness of 7, and tensile strength of 170 MPa, these wafers offer superior durability and reliability. High flatness and low warp enable precise lithography and etching, maximizing device yield and consistency.

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