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Doped Silicon Wafer

Doped Silicon Wafer

3500 INR/Pack
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Product Details:

  • Purity 99.99% - 99.999% (4N - 5N)
  • Strength 200 MPa (Approximate)
  • Hardness 7 Mohs
  • Product Type Doped Silicon Wafer
  • Material Monocrystalline Silicon
  • Alloy No (Pure Silicon Doped)
  • Shape Round (Wafer)
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Doped Silicon Wafer Price And Quantity

  • 1 Pack
  • 3500 INR/Pack

Doped Silicon Wafer Product Specifications

  • 200 MPa (Approximate)
  • No (Pure Silicon Doped)
  • 7 Mohs
  • Monocrystalline Silicon
  • Semiconductor, Solar cells, MEMS, Electronics fabrication
  • Round (Wafer)
  • Doped with Boron (p-type) or Phosphorus (n-type)
  • Nil
  • Doped Silicon Wafer
  • Diameter: 4-8 inches, Thickness: 500-800 microns
  • 99.99% - 99.999% (4N - 5N)
  • Grey/Metallic

Doped Silicon Wafer Trade Information

  • 1000-10000 Pack Per Day
  • 2-3 Days
  • All India

Product Description

Product Name Doped Silicon Wafer
Product Code NCZ-WM-0016
CAS 7440-21-3
Diameter (mm) 2 (50.8 mm), also available in 3, 5, 6, 12
Type P-Type and N-Type
Doping Boron etc.
Crystal Orientation <100> /other orientations are also available
Surface Single/Both Side Polished
Thickness 250-500 m
Resistivity 1-10 ohm-cm
Crystal method CZ
RRG (%) 12
Oxygen Contents (ppm) 12.5-16.5
Carbon Contents (ppm) 1


Superior Material Properties

Each wafer delivers precise electrical and mechanical specifications essential for advanced device fabrication. Key features, including high purity, customized doping levels, and robust strength, contribute to optimal functionality in demanding environments. The controlled crystal orientation and surface finish improve overall device yield and consistency, making these wafers suitable for both research and high-volume manufacturing.


Tailored for Industry Versatility

Our silicon wafers are widely used in semiconductors, solar cells, MEMS devices, and electronics assembly. With the ability to select doping type (boron/p-type or phosphorus/n-type), dimensions, and carrier concentration, clients benefit from high adaptability to specific project requirements. Their cleanliness standard and pure silicon composition support reliable and scalable production across scientific and commercial sectors.

FAQs of Doped Silicon Wafer:


Q: How are doped silicon wafers customized to meet specific application requirements?

A: Doped silicon wafers are customized by selecting crystal orientation (<100> or <111>), carrier concentration, and resistivity levels based on the intended application. The doping element (boron for p-type or phosphorus for n-type) and surface finish (single or double side polished) are chosen to optimize electrical and physical properties for semiconductor, solar cell, or MEMS device fabrication.

Q: What benefits do high purity levels (99.99% - 99.999%) offer for these wafers?

A: High purity levels ensure minimal contamination, enhanced device performance, and greater reliability during fabrication. Purity also optimizes electrical characteristics, reducing defects and improving product lifespan in advanced electronics and solar applications.

Q: When should single side versus double side polished wafers be used?

A: Single side polished wafers are ideal for general semiconductor processing and applications requiring one pristine surface, while double side polished wafers are recommended for advanced processes, MEMS fabrication, and applications requiring both sides to be extremely flat and defect-free.

Q: Where can these wafers be sourced in India?

A: Doped silicon wafers can be sourced from specialized dealers, exporters, importers, manufacturers, producers, retailers, suppliers, traders, and wholesalers across India. Ensure the provider offers semiconductor-grade cleanliness and cleanroom packing to meet industry standards.

Q: What is the process for ensuring semiconductor-grade cleanliness?

A: Semiconductor-grade cleanliness is achieved using filtered environments and rigorous packaging protocols. Each wafer undergoes thorough cleaning, inspection, and is then packed in cleanroom conditions to prevent particulate contamination and preserve material integrity during shipping and handling.

Q: How is the carrier concentration adjusted in doped silicon wafers?

A: Carrier concentration is tailored during the doping process by controlling the amount of boron (for p-type) or phosphorus (for n-type) introduced into the silicon crystal, allowing clients to specify electrical conductivity suitable for their application.

Q: What advantages do beveled or flat edge types provide?

A: Beveled edges reduce the risk of chipping during handling and processing, enhancing wafer durability. Flat edges facilitate alignment and positioning during automated manufacturing and lithography, increasing operational efficiency.

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