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Industrial SILICON GERMANIUM WAFERS

Industrial SILICON GERMANIUM WAFERS

3500 INR/Pack
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Product Details:

  • Purity 99.99%
  • Hardness 5.5-6.5 Mohs
  • Strength High mechanical strength
  • Product Type Industrial Wafer
  • Material Monocrystalline Silicon Germanium
  • Alloy Silicon-Germanium (SiGe)
  • Shape Round wafer
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Industrial SILICON GERMANIUM WAFERS Price And Quantity

  • 3500 INR/Pack
  • 1 , , Pack

Industrial SILICON GERMANIUM WAFERS Product Specifications

  • 5.5-6.5 Mohs
  • 99.99%
  • Round wafer
  • Silicon-Germanium (SiGe)
  • Silicon (Si), Germanium (Ge)
  • Industrial Wafer
  • Grey
  • <0.05%
  • High mechanical strength
  • 4 inch, 6 inch, 8 inch diameter; Thickness: 500 m - 800 m
  • Semiconductor, Microelectronics, Solar cells, Sensors
  • Monocrystalline Silicon Germanium

Industrial SILICON GERMANIUM WAFERS Trade Information

  • 1000-10000 , , Pack Per Day
  • 2-3 Days
  • Yes
  • Sample costs shipping and taxes has to be paid by the buyer
  • All India

Product Description

Product Name Silicon Germanium Wafers
Product Code NCZ-WM-0017
CAS 7440-56-4
Diameter 50.8 mm, also available in 3, 5, 6, 12 inch
Type N-Type
Doping Antimony
Orientation <100>
Surface Both/Single Side Polished
Wafer Thickness 500 µm
Resistivity 1-10 ohm-cm


Engineered for Peak Performance

Our Silicon Germanium wafers are crafted from monocrystalline materials and engineered for industries that demand precision and reliability. The customizable properties, including resistivity and doping type, allow for broad application across diverse fields such as microelectronics and photovoltaics. Low defect density ensures optimal performance in high-demand manufacturing environments.


Comprehensive Quality and Compliance

Adhering to international standards like RoHS and REACH, these wafers guarantee a responsible and sustainable supply chain. Every wafer undergoes stringent quality checks for purity, mechanical strength, and thermal stability, making them a dependable choice for global exporters, importers, and domestic markets alike.

FAQs of Industrial SILICON GERMANIUM WAFERS:


Q: How are the crystal orientations <100> and <111> chosen for Silicon Germanium wafers?

A: The <100> and <111> crystal orientations are selected based on their influence on electronic properties, such as carrier mobility and junction formation. The choice depends on the intended device application, with <100> commonly used in CMOS processes and <111> preferred for specific analog or sensor devices.

Q: What is the process for customizing wafer resistivity and doping type?

A: Resistivity and doping type are adjusted during the crystal growth or diffusion stages by introducing controlled amounts of N-type (phosphorus) or P-type (boron) dopants. This enables tailored electrical properties, meeting unique device requirements for various semiconductor applications.

Q: When should I select double side polished wafers over single side polished?

A: Double side polishing is ideal when both wafer surfaces participate in device fabrication, such as in advanced sensors or certain MEMS devices. It provides improved flatness and lower surface roughness, delivering better wafer handling and process uniformity.

Q: Where can these SiGe wafers be used in industry?

A: These wafers serve a wide spectrum of industries, including semiconductors, microelectronics, solar energy, and sensor manufacturing. Their robustness and customizable features accommodate research, development, mass production, and specialty device applications.

Q: What packaging process ensures wafer cleanliness and safety during transit?

A: Wafers are packed in cleanroom conditions, either in cassettes or single wafer boxes, ensuring minimum contamination and protection from physical damage. This guarantees their integrity from manufacturer to end-user.

Q: How does low defect density benefit wafer usage in high-performance applications?

A: Low defect density (<1000/cm) minimizes the risk of device failure and maximizes yield in production, supporting reliable and consistent electronic performance in finished components.

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