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SILICON CARBIDE WAFERS SILICON CARBIDE WAFERS
SILICON CARBIDE WAFERS
SILICON CARBIDE WAFERS

SILICON CARBIDE WAFERS

6502 INR/Pack
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Product Details:

  • Strength High mechanical strength
  • Hardness Mohs 9.25
  • Purity 99.99% (4N)
  • Product Type Semiconductor Wafer
  • Material Monocrystalline Silicon Carbide
  • Shape Round (Wafer)
  • Moisture <0.05%
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SILICON CARBIDE WAFERS Price And Quantity

  • 1 , , Pack
  • 6502 INR/Pack

SILICON CARBIDE WAFERS Product Specifications

  • High mechanical strength
  • Mohs 9.25
  • SiC (Silicon Carbide), Trace Impurities (<0.01%)
  • Grey to Black
  • Monocrystalline Silicon Carbide
  • Semiconductor Wafer
  • Power electronics, high-frequency devices, LED substrates, automotive, aerospace
  • <0.05%
  • Custom sizes, typically 2 (50.8mm), 3 (76.2mm), 4 (100mm), 6 (150mm), 8 (200mm) diameter wafers
  • 99.99% (4N)
  • Round (Wafer)

SILICON CARBIDE WAFERS Trade Information

  • 1000-10000 , , Pack Per Day
  • 2-3 Days
  • All India

Product Description

Product Name Silicon Carbide Wafers N-Type
Product Code NCZ-WM-0019
CAS No. 409-21-2
Diameter 12 inch (304.8 mm), also available in 2, 3, 4, 5, 6 inch
Type N-Type and P-Type
Doping Phosphorous and Other dopants are also available
Crystal Orientation <100> and other orientations are also  available
Surface Single Side/Both Side Polished
Thickness 275 µm
Resistivity 1-10ohm-cm
Crystal method CZ
RRG <12 %
Oxygen Contents 12.5-16.5 ppm
Carbon Contents <1 ppm


Superior Performance and Versatility

SiC wafers are engineered to deliver unmatched performance in demanding applications such as power electronics, high-frequency communication devices, and LED substrates. With their high thermal conductivity, low dislocation density, and exceptional hardness, they are perfect for environments requiring both reliability and efficiency.


Precision Fabrication and Clean Packaging

Each silicon carbide wafer is expertly polishedavailable in single or double-sided finishensuring optimum surface uniformity. Wafers are meticulously ground at the edges (SBE), cleanroom packed to safeguard against contamination, and supplied with traceability through ISO 9001:2015 certification.


Flexible Customization for Industry Needs

Available in a range of diameters (2 to 8 inches) and customizable thicknesses, our SiC wafers can be tailored to specific client requirements. Options such as N-type or P-type doping, epitaxial layers up to 100 m, and custom dimensions make these wafers suitable for manufacturers, researchers, and retailers across India.

FAQs of SILICON CARBIDE WAFERS:


Q: How are silicon carbide wafers typically used in industry?

A: Silicon carbide wafers are primarily used in power electronics, high-frequency devices, LED substrate production, and industries such as automotive and aerospace. Their high thermal and mechanical stability make them ideal for applications where efficiency, durability, and heat resistance are essential.

Q: What benefits do 4H/6H-SiC wafer orientations offer?

A: The 4H and 6H orientations of SiC wafers provide different electronic and physical properties, enabling precise tailoring for specialized requirements. 4H-SiC is favored for power and high-frequency applications due to higher electron mobility, while 6H-SiC suits other specific device designs.

Q: When is an epitaxial layer needed on a silicon carbide wafer?

A: An epitaxial layer, which can be added up to 100 m thick, is useful when specific electrical properties or device structures are required during semiconductor fabrication. It enhances device performance, making it suitable for advanced electronics and optoelectronics applications.

Q: Where are these silicon carbide wafers produced and distributed?

A: These wafers are manufactured, processed, and distributed throughout India, serving a wide network that includes dealers, exporters, importers, manufacturers, producers, retailers, suppliers, traders, and wholesalers. Custom orders can be arranged to meet particular specifications.

Q: What is the advantage of cleanroom packaging for these SiC wafers?

A: Cleanroom packaging ensures the wafers remain uncontaminated during transport and storage, which is critical for maintaining high device yield and reliable semiconductor performance in subsequent manufacturing processes.

Q: How do dopant types affect the properties of silicon carbide wafers?

A: Dopants such as Nitrogen (N-type) and Aluminum or Boron (P-type) are introduced to control the electrical conductivity of the wafers. This enables customization for different electronic applications, ensuring optimal device characteristics for varied usage scenarios.

Q: What certifications and purity standards do these SiC wafers meet?

A: These wafers comply with ISO 9001:2015 for quality management and are RoHS compliant for environmental safety. They boast a high purity of 99.99% (4N), with trace impurities below 0.01%, making them ideal for high-performance and sensitive applications.

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