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Hexagonal Boron Nitride (H-BN) on Si/SiO2

Hexagonal Boron Nitride (H-BN) on Si/SiO2

Product Details:

  • Chemical Composition ~99% Hexagonal Boron Nitride
  • Usage & Applications Dielectric layer, Substrate for nanodevices, Thermal interface material
  • Form Film (on Si/SiO2 substrate)
  • Purity(%) >99%
  • Melting Point ~2973C
  • Water Absorption Negligible
  • Hardness (%) High (~4-5 Mohs scale)
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Hexagonal Boron Nitride (H-BN) on Si/SiO2 Price And Quantity

Hexagonal Boron Nitride (H-BN) on Si/SiO2 Product Specifications

  • >99%
  • Hexagonal thin film
  • Film (on Si/SiO2 substrate)
  • Whitish
  • ~99% Hexagonal Boron Nitride
  • Dielectric layer, Substrate for nanodevices, Thermal interface material
  • Negligible
  • Single/Mono layer grown on Si/SiO2 substrate
  • ~2973C
  • Non-porous
  • 2.25
  • High mechanical strength
  • 2.25 Gram per cubic centimeter(g/cm3)
  • Excellent
  • Atomically smooth
  • High (~4-5 Mohs scale)
  • High (about 30-60 W/mK)
  • Electronic, Optoelectronic, and Spintronic devices; Substrate for 2D materials; Graphene-based transistors
  • Non-oxide refractories

Hexagonal Boron Nitride (H-BN) on Si/SiO2 Trade Information

  • Cash in Advance (CID), Cheque, Cash Advance (CA)
  • 55000 , Per Week
  • 7 Days Week
  • Western Europe, Australia, North America, Eastern Europe, Central America, Africa, Middle East, South America, Asia

Product Description



Experience the finest in advanced materials with our Decorated Hexagonal Boron Nitride (H-BN) on Si/SiO2 substrates. Featuring an ultra-clean, atomically smooth surface, this high-purity (>99%) h-BN film, grown by Chemical Vapor Deposition, ensures optimum performance for electronic, optoelectronic, and spintronic devices. Its excellent electrical insulation, high thermal conductivity, and dimensional stability make it ideal for 2D material research and graphene-based transistors. With custom chip sizes and a special rate on Sale, Add to Cart today and elevate your research capabilities!

Application Excellence and Surface Superiority

Hexagonal Boron Nitride (H-BN) on Si/SiO2 offers an optimum dielectric layer and substrate for nanodevices. The ultra-clean, atomically smooth surface ensures minimal contamination, making it perfect for stacking van der Waals heterostructures and supporting graphene-based transistors. Its high mechanical strength and thermal conductivity provide unparalleled advantage, especially in electronic, optoelectronic, and spintronic applications. The decorated whitish thin film remains stable under extreme conditions, making it highly valued in research and industrial use.


Sample Policy, Secure Shipping, and Supply Information

We offer a transparent sample policy for Hexagonal Boron Nitride (H-BN) on Si/SiO2. All orders are processed through reputed FOB ports in India, ensuring secure shipping and timely arrival at your location. Our robust supply ability caters to both bulk and custom orders with reliable valuation and exceptional product consistency. Whether you are a dealer, importer, or manufacturer, our logistics and customer care teams prioritize your satisfaction from dispatch to delivery.


FAQs of Hexagonal Boron Nitride (H-BN) on Si/SiO2:


Q: How can Hexagonal Boron Nitride (H-BN) on Si/SiO2 be used in electronic applications?

A: H-BN on Si/SiO2 is commonly used as a dielectric layer and substrate for graphene-based transistors and other nanodevices due to its superior insulation, high purity, and atomically smooth surface.

Q: What is the process for obtaining customized chip sizes?

A: You can request custom lateral dimensions for H-BN on Si/SiO2 when placing an order. Our production team will fabricate the material to your required chip size, typically around 10x10 mm, but other sizes are available on demand.

Q: When can I expect the arrival of my order and how is shipping handled?

A: Orders are shipped securely through reputable FOB ports in India. Depending on your location and order size, arrival times may vary, but we ensure safe packaging and prompt dispatch to meet your timeline.

Q: Where can this product be sourced from and who can purchase it?

A: H-BN on Si/SiO2 is available for purchase from our company in India. We serve dealers, exporters, importers, manufacturers, producers, retailers, suppliers, traders, and wholesalers globally.

Q: What are the main advantages of using H-BN on Si/SiO2 for research and industry?

A: The main advantages include excellent electrical insulation, high mechanical strength, non-porous and ultra-clean surfaces, high thermal conductivity, and chemical stability, making it ideal for advanced device fabrication and research.

Q: How is the surface cleanliness and purity of the product ensured?

A: Our H-BN films are synthesized using state-of-the-art Chemical Vapor Deposition and undergo rigorous quality checks to guarantee ultra-clean surfaces with purity levels above 99%, minimizing contaminant presence.

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