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CVD Graphene on SiO2 Substrate

CVD Graphene on SiO2 Substrate

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Product Details:

  • HS Code 2853.90.90
  • Ph Level Neutral
  • Refractive Rate n ~2.6 (Graphene),n ~1.46 (SiO2)
  • Structural Formula Hexagonal lattice of carbon atoms (graphene) on SiO2 layer
  • Purity >99%
  • Density 2.2 Gram per cubic centimeter(g/cm3)
  • Other Names CVD Graphene on oxidized silicon wafer
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CVD Graphene on SiO2 Substrate Product Specifications

  • Neutral
  • 2853.90.90
  • Nanomaterial
  • Ideal for scientific research and device fabrication
  • n ~2.6 (Graphene),n ~1.46 (SiO2)
  • Hexagonal lattice of carbon atoms (graphene) on SiO2 layer
  • CVD-grown monolayer graphene on SiO2/Si substrate
  • >99%
  • CVD Graphene on oxidized silicon wafer
  • 2.2 Gram per cubic centimeter(g/cm3)
  • Graphene on silicon dioxide substrate
  • Research Grade
  • Custom/Customer-specified dimensions
  • Odorless
  • C (Graphene), SiO2 (Substrate)
  • Electronics, sensors, research, photonics
  • 12.01 (C), 60.08 (SiO2)
  • Thin Film (Sheet)
  • Monolayer/CVD film
  • Store in dry, clean conditions, ambient temperature
  • 1034343-98-0 (Graphene)
  • >3600C (Graphene)
  • Insoluble in water and solvents
  • Yes
  • 2D Material (Graphene on SiO2)
  • Sublimes (Graphene does not boil)

CVD Graphene on SiO2 Substrate Trade Information

  • North America, South America, Eastern Europe, Western Europe, Middle East, Africa, Central America, Asia, Australia

Product Description

CVD Graphene on SiO2 Substrate

CVD Graphene on SiO2 Substrate/Wafer

NCZ-GSW-0018

Purity

> 99.9%

Graphene Film

2000 cm2/Vs

Hall Electron Mobility on SiO2/Si

4000 cm2/Vs

Product Detail

Sheet Resistance

<600©/sq

Custom Order

<300©/sq

Transparency

>95%

Graphene On Silicon Dioxide (300NM)/SI Substrate (P-TYPE, 1-10 ·CM)

CVD Graphene

Substrate

1cm x 1cm

1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si

1inch x 1inch

3.0cm x 3.0cm, thickness: 300nm SiO2/700um Si

3cm x 3cm

3.5cm x 3.5cm, thickness: 300nm SiO2/700um Si

7cm x 7cm

Diameter: 4inch, thickness: 300nm SiO2/600um Si


Ultra-Pure Monolayer Graphene Films

Our CVD graphene films on SiO2/Si substrate achieve >99% purity and high crystalline quality. Each sheet, just ~0.34 nm thick, exhibits continuous domains (>10 m) and excellent electronic and thermal properties, making them ideal for precision research or device integration.


Highly Customizable Substrate Formats

Available in standard sizes like 10x10 mm, 15x15 mm, and 1-inch wafers, or tailored to customer specifications. The underlying substrate features thermally grown SiO2 (285nm or 300nm), ensuring smoothness (<1 nm RMS) and compatibility with various fabrication processes and scientific instruments.


Versatile Applications in Science and Industry

Perfect for electronics, sensors, photonics, and fundamental research, CVD Graphene on SiO2 offers transparency, stability, and high performance. The materials robustness and purity will advance both experimental studies and device manufacturing across numerous sectors.

FAQs of CVD Graphene on SiO2 Substrate:


Q: How is the graphene transferred onto the SiO2/Si substrate?

A: The graphene monolayer is transferred onto the thermally grown SiO2/Si substrate using either a wet or dry transfer method, depending on user requirements. Both techniques maintain film integrity and result in low defect density with 90% monolayer coverage.

Q: What are the most common substrate sizes and thicknesses offered?

A: Standard substrate formats include 10x10 mm, 15x15 mm, and 1-inch wafers. The SiO2 layer is typically available in 285nm or 300nm thickness. Custom sizes and specifications can be provided upon request to suit specific research needs.

Q: Where is CVD Graphene on SiO2 substrate typically used, and who benefits from it?

A: This product is extensively used in electronics, sensor development, photonics, and academic research. Researchers, manufacturers, and developers benefit from its consistency, high conductivity, and low defect density, making it a preferred choice for device prototyping and fundamental studies.

Q: What care and storage conditions are recommended for this material?

A: It is best to store CVD graphene on SiO2/Si substrates in clean, dry conditions at ambient temperature. Protective packaging, such as clean-boxes with optional layers, is available to ensure long shelf life and avoid contamination.

Q: What process ensures the purity and quality of the graphene film?

A: The graphene film is grown by Chemical Vapor Deposition (CVD), producing a monolayer with >99% purity, low defect density (D/G <0.1), and high monolayer coverage. Raman spectroscopy verifies the crystallinity and domain size, confirming the materials superior quality.

Q: How does the products surface quality affect device fabrication?

A: With an SiO2 surface roughness of <1 nm (RMS), the substrate provides a smooth base for graphene, which is essential for fabricating nanoscale devices and achieving optimal electrical and physical performance.

Q: What are the benefits of using CVD Graphene on SiO2 substrate in research?

A: Researchers gain access to a stable, non-toxic, and highly conductive 2D material with exceptional transparency and low defect density, making it suitable for advanced experiments, device fabrication, and studies in nanotechnology and material science.

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