CVD Graphene on Silicon Substrate

CVD Graphene on Silicon Substrate
CVD Graphene on Silicon Substrate
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Product Code : NCZ-GSW-0017
Brand Name : NANOCHEMAZONE
Product Description

Details

CVD Graphene On Silicon Substrate


NCZ-GSW-0017


Purity

> 99.9%

Graphene Film


Hall Electron Mobility on SiO2/Si

 4000 cm2/Vs

Sheet Resistance

 450±40 Ω/sq (1cm x1cm)

PRODUCT DETAIL

PREPARATION METHOD:

  • Copper-based graphene is prepared by CVD method.

  • Graphene is transferred from copper to silicon substrate.

SILICON WAFER:

Wafer Thickness:

525 µm, (customization is possible)

Resistivity:

<0.01 ohm-cm

Type/Dopant:

P/N

Orientation:

<100> (customization is possible)

Front Surface:

Polished

Back Surface:

Etched




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