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CVD Graphene on Silicon Substrate

CVD Graphene on Silicon Substrate
CVD Graphene on Silicon Substrate
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Product Code : NCZ-GSW-0017
Brand Name : NANOCHEMAZONE
Product Description
Product Name

CVD Graphene On Silicon Substrate

NCZ-GSW-0017
Purity > 99.9%
Graphene Film
2000 cm2/Vs
Hall Electron Mobility on SiO2/Si  4000 cm2/Vs
Sheet Resistance  450±40 Ω/sq (1cm x1cm)

PRODUCT DETAIL

Transparency

>95%

PREPARATION METHOD:

  1. Copper-based graphene is prepared by CVD method.
  2. Graphene is transferred from copper to silicon substrate.

SILICON WAFER:

Wafer Thickness: 525 µm, (customization is possible)
Resistivity: <0.01 ohm-cm
Type/Dopant: P/N
Orientation: <100> (customization is possible)
Front Surface: Polished
Back Surface: Etched

ARITECH CHEMAZONE PVT LTD.
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