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Graphene on Ultra-Flat Thermal SiO2 Substrate

Graphene on Ultra-Flat Thermal SiO2 Substrate

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Product Details:

  • Poisonous Yes
  • Shape Ultra-flat thin film on circular or square substrate
  • Melting Point Above 3,600C (graphene is stable up to decomposition)
  • Boiling point Sublimes at >3,600C (graphene is stable up to high temperatures)
  • HS Code 38249992
  • Smell Odorless
  • Molecular Formula C (Graphene), SiO2 (substrate), Si (wafer)
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Graphene on Ultra-Flat Thermal SiO2 Substrate Product Specifications

  • Odorless
  • 2D Carbon Nanomaterial on Oxide Substrate
  • Nanoelectronics, high-frequency transistors, research on 2D materials, biosensors, optoelectronics, quantum Hall effect experiments, photonics, plasmonics, substrate for device fabrication
  • C (Graphene), SiO2 (substrate), Si (wafer)
  • Research Grade / Electronic Grade
  • Sublimes at >3,600C (graphene is stable up to high temperatures)
  • 38249992
  • Monolayer or few-layer graphene on Si/SiO2 substrate
  • 231-955-3 (for graphite/graphene)
  • Above 3,600C (graphene is stable up to decomposition)
  • Ultra-flat thin film on circular or square substrate
  • Yes
  • >99% (Graphene film)
  • Insoluble in water, organic solvents, and acids
  • Graphene on Silicon Dioxide/Silicon Substrate
  • Monolayer/few-layer film on rigid substrate
  • Custom/specification-based (ASTM standards for graphene possible)
  • 12.01 g/mol (C), 60.08 g/mol (SiO2), 28.09 g/mol (Si)
  • 2.2 Gram per cubic centimeter(g/cm3)
  • Neutral, pH not applicable
  • Hexagonal lattice sheet (2D sp2 carbon atoms)
  • SiO2: ~1.46, Graphene: ~2.6 (for specific wavelength ranges)
  • 7782-42-5 (Graphene/Graphite), 7631-86-9 (SiO2), 7440-21-3 (Si)
  • Odorless and tasteless
  • Research, device fabrication, advanced material study
  • Graphene-coated SiO2/Si wafer, Graphene on SiO2, Graphene film substrate
  • CVD-grown monolayer or few-layer graphene on ultra-flat thermal SiO2 on silicon wafer
  • Ambient, dry environment; avoid mechanical damage
  • Transparent-grey film on light-purple SiO2/Si substrate
  • Possible for layer number, size, and substrate type
  • ~10^6 S/m (for monolayer graphene)
  • <100 defects/µm² (Raman spectroscopy confirmed)
  • High crystalline quality; typically >90% monolayer coverage, low defect density
  • <100> orientation silicon wafer
  • Raman verified, minimal polymer residue
  • Yes
  • GOUS-XXXX (manufacturer-specific)
  • Single layer (~0.34 nm) or few-layers (up to ~2 nm)
  • CVD-grown graphene transferred onto SiO2/Si by wet/dry methods
  • Typically 300 nm thermal SiO2 on 500 µm silicon wafer
  • Indefinite under proper storage
  • >5,000 cm²/V·s
  • 5 mm × 5 mm, 10 mm × 10 mm, 1 inch, 2 inch, 4 inch wafer, custom sizes
  • Protective box/vacuum-sealed bag
  • <0.5 nm (on ultra-flat thermal SiO2)
  • >350°C (typical for device processing)
  • ~97.7% at visible wavelengths (for monolayer graphene)

Graphene on Ultra-Flat Thermal SiO2 Substrate Trade Information

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Product Description

Graphene on Ultra-Flat Thermal SiO2 Substrate

Product Name

Graphene on Ultra-Flat Thermal SiO2 Substrate

Stock No.

NCZ-GSW-0011

Purity

> 99.9%

Graphene Film


FET Electron Mobility on Al2O3

2000 cm2/Vs

Hall Electron Mobility on SiO2/Si

4000 cm2/Vs

Sheet Resistance

450±40 /sq (1cm x1cm)




Exceptional Flatness and Quality

With an RMS surface roughness of less than 0.5 nm on ultra-flat thermal SiO2, this substrate provides an optimal platform for graphene film attachment. The high crystalline quality and >90% monolayer coverage promote low defect density and uniformity, which are validated by Raman spectroscopy. These characteristics support reliable, reproducible results in advanced research and fabrication.


Wide Range of Sizes and Customization

Standard options include square chips (5 mm 5 mm, 10 mm 10 mm) and round wafers (1 inch, 2 inch, 4 inch), with custom sizing available on request. The substrate structure and graphene layer number can be tailored for specific projects, enabling flexibility for electronics, photonics, sensor applications, and more.


Proven Stability and Cleanliness

Graphene films on thermal SiO2/Si substrates offer temperature stability up to 350C for device processing, and sheet cleanliness is assured with minimal polymer residue and Raman verification. Storage in a dry, ambient environment keeps the product pristine indefinitely, with convenient packaging for shipment and handling.

FAQs of Graphene on Ultra-Flat Thermal SiO2 Substrate:


Q: How is the graphene transferred onto the ultra-flat thermal SiO2 substrate?

A: Graphene is typically synthesized by chemical vapor deposition (CVD) and then transferred to the ultra-flat thermal SiO2/Si substrate using either wet or dry transfer methods. These processes minimize defects and preserve high crystalline quality.

Q: What dimensions and thicknesses are available for this graphene-on-SiO2/Si product?

A: Standard sizes include 5 mm 5 mm, 10 mm 10 mm, 1 inch, 2 inch, and 4 inch wafers, with custom shapes upon request. Graphene thickness options range from single-layer (~0.34 nm) to few-layers (up to ~2 nm) based on your specifications.

Q: Where is this substrate commonly used in research and device fabrication?

A: This product finds usage in various advanced fields, including nanoelectronics, high-frequency transistors, biosensor research, optoelectronics, photonics, quantum Hall effect experiments, and as substrates for two-dimensional material studies.

Q: What benefits does the ultra-flat thermal SiO2 provide for graphene applications?

A: Ultra-flat thermal SiO2 creates a smooth, low-roughness surface (<0.5 nm RMS), promoting uniform graphene coverage, minimal defect sites, high carrier mobility, and optimal results in electronic and optoelectronic device fabrication.

Q: How long does the graphene-coated substrate remain functional and what is the ideal storage method?

A: When stored in ambient, dry conditions and protected from mechanical damage, the substrates properties remain stable indefinitely, making it suitable for long-term research. The product is shipped in a protective box or vacuum-sealed bag to preserve cleanliness.

Q: Is the graphene-on-SiO2/Si substrate suitable for high-temperature processes?

A: Yes, the graphene film and SiO2/Si substrate are thermally stable up to 350C under typical device processing conditions, with graphene itself stable beyond 3,600C before decomposition.

Q: What quality assurance measures ensure graphene performance and cleanliness?

A: Each substrate is Raman verified to confirm high monolayer coverage (>90%), low defect density (<100 defects/m), and minimal polymer residues. Packaged under clean conditions, the product meets RoHS compliance and ASTM-relevant standards for research and device use.

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