Details
CVD Graphene On Silicon Substrate | |
NCZ-GSW-0017 | |
Purity | > 99.9% |
Graphene Film |
|
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance | 45040 /sq (1cm x1cm) |
PRODUCT DETAIL
PREPARATION METHOD:
Copper-based graphene is prepared by CVD method.
Graphene is transferred from copper to silicon substrate.
SILICON WAFER:
Wafer Thickness: | 525 m, (customization is possible) |
Resistivity: | <0.01 ohm-cm |
Type/Dopant: | P/N |
Orientation: | <100> (customization is possible) |
Front Surface: | Polished |
Back Surface: | Etched |